16SepMethod of making on-chip signal paths with electrical and physical connectionsBackground technique: 1. Numerous items such as smartphones, smart watches, tablets, automobiles, aerial drones, appliances, aircraft, motion aids, an
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16SepPore array layer structure, precoating method, film forming method and relate...Technical implementation elements: 3. The embodiments of the present technology provide a hole array layer structure, a precoating method, a film form
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16SepHole array layer structure, pre-coating method, film-forming method, and rela...1. The present technology belongs to the technical field of biological detection, and in particular relates to a hole array layer structure, a precoat
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16SepA nanocomposite system and a method for researching nanomaterials, technical ...Technical implementation elements: 5. The technical problem to be solved by the present invention is: to provide a nanometer integrated system and a m
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16SepA nanocomposite system and method for researching nanomaterials1. The present invention relates to the field of research-level scientific research equipment in nanoscience, and in particular, to the field of a nan
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16SepPackaging structure, substrate, packaging method and process technology imple...Technical implementation elements: 3. The present technology provides a packaging structure, a substrate, and a packaging method, so as to reduce the
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16SepPackaging structure, substrate, packaging method and process1. The present technology relates to the field of chip packaging, and more particularly, to packaging structures, substrates, and packaging methods. B
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16SepA MEMS micro-hot plate based on lateral composite dielectric film and its man...Technical implementation elements: 4. In view of the above technical problems, the present invention provides a mems micro-hot plate based on a transv
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16SepA kind of MEMS micro-hot plate based on lateral composite dielectric film and...A kind of MEMS micro-hot plate based on transverse composite dielectric film and its manufacturing method technical field 1. The present invention rel
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16SepThe technical realization elements of the post-CMOS release method for the cr...Technical implementation elements: 5. In order to solve the problem of completing the structure release under the premise of being compatible with cmo
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16SepElements of Technical Implementation Elements of Post-CMOS Release Method for...Technical implementation elements: 5. In order to solve the problem of completing the structure release under the premise of being compatible with cmo
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16SepCross-beam sensitive structure post-CMOS release method for MEMS vector hydro...CMOS release method after cross-beam sensitive structure for mems vector hydrophone technical field 1. The present invention relates to the field of s
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