Elements of Technical Implementation Elements of Post-CMOS Release Method for Cross-beam Sensitive Structures for MEMS Vector Hydrophones

Technical implementation elements:

5. In order to solve the problem of completing the structure release under the premise of being compatible with cmos by using the mems process, the present invention provides a post-cmos release method for the cross beam sensitive structure of the mems vector hydrophone.

6. The present invention is achieved through the following technical solutions: a method for releasing cmos after a cross beam sensitive structure oriented to a mems vector hydrophone, comprising the following steps: step (1) organically cleaning the cmos chip to remove surface impurities; selecting cmos chip, crystal orientation "100", p-type substrate, silicon nitride passivation layer in the surface mems area has been patterned in the cmos process.

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