Cross-beam sensitive structure post-CMOS release method for MEMS vector hydrophone

CMOS release method after cross-beam sensitive structure for mems vector hydrophone

technical field

1. The present invention relates to the field of semiconductors, in particular to sidewall protection of silicon nitride and anisotropic corrosion release sensitive structures of silicon, in particular to a CMOS release method after a cross beam sensitive structure oriented to a mems vector hydrophone.

Background technique:

2. The mems vector hydrophone can detect vector information such as the vibration velocity of underwater particles, and can be applied to underwater detection platforms such as sonar systems, underwater unmanned submersibles, and air-dropped sonar buoys, and its performance has received extensive attention. The mems vector hydrophone integrated by cmos can greatly improve the performance of the vector hydrophone and has a good development prospect.

3. Post-CMOS integration in the cmos integration scheme is a hot research topic at present. In this scheme, how to use the mems process to complete the structure release under the premise of being compatible with cmos is a huge challenge. In the traditional mems process, photolithography is used to transfer the mask pattern to the silicon wafer, and the photolithography accuracy in the mems process is often not as good as the cmos process, and the photolithography steps reduce the production efficiency and increase the production cost. It is also a problem that needs to be studied to realize the mass production of chips.

4. To solve this problem, based on the sensitive structure of the mems vector hydrophone, the present invention designs a post-cmos mems release method that does not require lithography and is compatible with cmos.

Contact Us：

Email: zhang@pride-cnc.com

Tel: +86-755-23699351

Mob: +8618666663894