The technical realization elements of the post-CMOS release method for the cross-beam sensitive structure for MEMS vector hydrophones:

Technical implementation elements:

5. In order to solve the problem of completing the structure release under the premise of being compatible with cmos by using the mems process, the present invention provides a post-cmos release method for the cross beam sensitive structure of the mems vector hydrophone.

6. The present invention is achieved through the following technical solutions: a method for releasing cmos after a cross beam sensitive structure oriented to a mems vector hydrophone, comprising the following steps: step (1) organically cleaning the cmos chip to remove surface impurities; selecting cmos chip, crystal orientation "100", p-type substrate, silicon nitride passivation layer in the surface mems area has been patterned in the cmos process.

7. Step (2) Deep silicon etching the substrate silicon, using the silicon nitride passivation layer as a mask to etch the exposed silicon; deep silicon etching can

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