A kind of MEMS micro-hot plate based on lateral composite dielectric film and its manufacturing method

A kind of MEMS micro-hot plate based on transverse composite dielectric film and its manufacturing method

technical field

1. The present invention relates to the technical field of mems, in particular to a mems micro-hot plate based on a transverse composite dielectric film and a manufacturing method thereof.

Background technique:

2. Micro-hotplates based on the mems process have been proven to have the advantages of miniaturization, low power consumption, fast thermal response, and easy integration, and are widely used in micro-gas sensors, micro-gas flow meters, infrared emitters, and micro-thermometers. For example, when a micro-hot plate is used for a micro-gas sensor, the performance of the micro-gas sensor is affected by its operating temperature and mechanical stability. Usually, the micro-hot plate used for a micro-gas sensor needs to provide a uniform temperature of 150°C to 400°C and good The mechanical stability of the micro-hot plate requires that the heating rate of the micro-hot plate be fast and evenly distributed. In order to be integrated in mobile devices, microhotplates need to reduce power consumption as much as possible and provide a suitable temperature, while maintaining good temperature uniformity, mechanical properties and heating rate, which has become a hot spot in the field of microhotplate research.

3. The current mems planar micro-hot plate generally uses sio2, si3n4 or sio2, si3n4 films combined in a vertical direction to form a support layer and a dielectric layer. However, the low thermal conductivity of the micro-hot plate using only sio2 material is easy to increase heat loss and cause high-temperature thermal deformation. The micro-hot plate using only si3n4 material can alleviate the high-temperature thermal deformation and increase the heating rate, but the high thermal conductivity The properties of sio2 and si3n4 lead to an increase in lateral heat loss, and the deformation of the hot plate composed of sio2 and si3n4 films combined in a vertical direction is reduced, but the lateral heat loss still exists. These factors lead to a larger thermal conduction loss and higher power consumption of the flat-type micro-hotplate than the suspension-bridge-type micro-hotplate. However, the serious problems of the suspension bridge-type micro-hot plate are large deformation, easy damage, and incompatibility with other processes in the later stage, resulting in low yield, low stability and reliability of device preparation based on this type of micro-hot plate.

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