Technical Realization Elements Of Sapphire Wafer Direct Bonding Method For Sapphire Pressure Sensitive Structure

Technical implementation elements:

5. In order to solve the problem that the existing technology is difficult to realize the direct bonding of the sapphire wafer in the sapphire pressure sensitive structure and the low working temperature of the prepared pressure sensor, the present invention provides a sapphire wafer direct bonding of the sapphire pressure sensitive structure. bonding method.

6. The present invention is realized by adopting the following technical scheme: a method for direct bonding of sapphire wafers with a sapphire pressure-sensitive structure, comprising the following steps: 1) Pre-slicing the sapphire wafer a by mechanical cutting or laser cutting , obtain the pre-scribing sapphire wafer a; 2), etch the sapphire wafer b out of the cavity, and then use mechanical cutting or laser cutting to pre-scribe the sapphire wafer b to obtain the etching, pre-scribing Sapphire wafer b; 3), the pre-scribing sapphire wafer a and the etched and pre-scribing sapphire wafer b are sequentially cleaned by rca and ultrasonically cleaned with deionized water, and then etched by a concentrated phosphoric acid solution before being placed forming a hydroxyl layer in dilute sulfuric acid with a concentration of 0.5-1 mol/l, rinsing with deionized water, and obtaining hydrophilic pretreated sapphire wafer a and sapphire wafer b;

4) Align and stack the sapphire wafer a and the sapphire wafer b after hydrophilic pretreatment, put them into a bonder for pre-bonding, and obtain a pre-bonded sapphire wafer; 5), place the pre-bonded sapphire wafers The bonded sapphire wafer is placed in the fixture and fixed, and then placed on the pressure platform under the heating chamber of the vacuum chamber of the bonding equipment, and the upper pressure platform of the bonding equipment is operated to

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